Double Injection Type Magnetodiode Formed on a SOI Substrate
نویسندگان
چکیده
منابع مشابه
Investigation and simulation of the effect of Substrate Doping on the Switching Delay of 22nm Double-Insulating UTBB SOI MOSFET
In this paper, for the first time, the effect of the substrate doping of 22nm double-insulating UTBB silicon-on-insulator device on the switching performance and turn-on delay of the transistor is investigated. In UTBB devices, the substrate voltage is varied from positive to zero then negative voltages to trade-off transistor speed against the leakage current. Various circuit design procedures...
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1. Abstract Low-field mobilities for (100) and (110) substrate orientations in single-gate (SG) and double-gate (DG) operation modes are compared. It is argued that for the same gate voltage twice as high carrier concentration in DG ultra-thin body (UTB) SOI as compared to the SG mode leads to a higher relative occupation of primed subband ladder for (100) substrate orientation. Efficient scatt...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Sensors and Micromachines
سال: 2002
ISSN: 1341-8939,1347-5525
DOI: 10.1541/ieejsmas.122.280